r07ds0325ej0100 rev.1.00 page 1 of 7 apr 06, 2011 preliminary datasheet RJH60F4DPQ-A0 silicon n channel igbt high speed power switching features ? low collector to emitter saturation voltage v ce(sat) = 1.4 v typ. (at i c = 30 a, v ge = 15v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching t f = 80 ns typ. (at i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 5 , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003zh-a (package name: to-247a) absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25 c i c note1 60 a collector current tc = 100 c i c note1 30 a collector peak current ic(peak) note1 120 a collector to emitter diode forward peak current i df (peak) note2 100 a collector dissipation p c 235.8 w junction to case thermal impedance (igbt) j-c 0.53 c/w junction to case thermal impedance (diode) j-cd 2.0 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pulse width limited by safe operating area. 2. pw 5 s, duty cycle 1% r07ds0325ej0100 rev.1.00 apr 06, 2011
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 2 of 7 apr 06, 2011 electrical characteristics (tj = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 100 a v ce = 600v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4 ? 8 v v ce = 10v, i c = 1 ma v ce(sat) ? 1.4 1.82 v i c = 30 a, v ge = 15v note3 collector to emitte r saturation voltage v ce(sat) ? 1.7 ? v i c = 60 a, v ge = 15v note3 input capacitance cies ? 1900 ? pf output capacitance coes ? 93 ? pf reverse transfer capacitance cres ? 33 ? pf v ce = 25 v v ge = 0 v f = 1 mhz t d(on) ? 45 ? ns t r ? 150 ? ns t d(off) ? 85 ? ns switching time t f ? 80 ? ns i c = 30 a, v ce = 400 v, v ge = 15 v rg = 5 note3 inductive load v ecf1 ? 1.2 2.1 v i f = 20 a note3 c-e diode forward voltage v ecf2 ? 1.5 ? v i f = 40 a note3 c-e diode reverse recovery time t rr ? 90 ? ns i f = 20 a di f /dt = 100 a/ s notes: 3. pulse test
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 3 of 7 apr 06, 2011 main characteristics 120 100 80 60 40 20 0 typical transfer characteristics typical output characteristics 120 100 80 60 40 20 1234 5 ta = 2 5 c pulse test 8.5 v 9.5 v 9 v 10 v 11 v 12 v 15 v collector current i c (a) collector current i c (a) collector current i c (a) maximum safe operation area 1000 100 10 1 10 100 1 0.1 0.01 1000 12 0 0 14 468 10 pw = 100 s 10 s 1.2 0.6 1.8 2.4 3.0 6 8 10 12 14 20 16 18 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) 30 a 15 a i c = 60 a v ge = 8 v ta = 2 5 c pulse test v ce = 10 v pulse test collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) gate to emitter voltage v ge (v) ta = 2 5 c 1 shot pulse tc = 75c 25c ?25 c 0 2 4 6 10 8 collector to emitter saturation voltage vs. junction temparature (typical) 1.0 1.2 1.4 1.6 2.0 1.8 ? 25 0 25 75 125 50 100 150 collector to emitter saturation voltage v ce(sat) (v) junction temparature tj ( c) 30 a 15 a i c = 60 a junction temperature tj ( c) gate to emitter cutoff voltage vs. case temperature (typical) gate to emitter cutoff voltage v ge(off) (v) -25 0 25 50 75 100 125 150 v ce = 10 v 1 ma i c = 10 ma v ge = 15 v pulse test
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 4 of 7 apr 06, 2011 gate charge qg (nc) dynamic input characteristics (typical) colloctor to emitter voltage v ce (v) gate to emitter voltage v ge (v) 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 i c = 30 a v ge v ce v ce = 600 v 300 v v ce = 600 v 300 v diode forward current i f (a) capacitance c (pf) 1 10 100 1000 10000 0 50 150 100 200 250 300 typical capacitance vs. colloctor to emitter voltage colloctor to emitter voltage v ce (v) cies coes cres v ge = 0 v f = 1 mhz ta = 25 c 0 20 40 60 80 100 0123 4 v ge = 0 v ta = 2 5 c pulse test c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical)
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 5 of 7 apr 06, 2011 050 25 150 75 125 100 050 25 150 75 125 100 800 400 1600 1200 0 120 80 40 240 200 160 0 switching characteristics (typical) (3) 100 1000 10 t d(off) t d(on) t f t r junction temperature tj (c) (inductive load) junction temperature tj (c) (inductive load) switching characteristics (typical) (4) eoff eon swithing energy losses e ( j) switching times t (ns) 110 200 100 10 1000 100 100000 10000 swithing energy losses e ( j) 110100 collector current i c (a) (inductive load) eoff eon switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c t r includes the diode recovery v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 t r includes the diode recovery t d(off) t d(on) t f t r
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 6 of 7 apr 06, 2011 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 10 100 1 m 10 m 100 m 1 10 0.01 1 0.1 10 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2 c/w, tc = 25 c 0 .05 0.2 0.1 0.5 d = 1 0.02 tc = 25 c 0.01 1 shot pulse switching time test circuit waveform d = 1 0.5 0.2 0.1 0.05 tc = 2 5 c p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.53 c/w, tc = 25 c 0.02 1 shot pulse 0.01 diode clamp d.u.t rg l v cc t d(off) t off t on t d(on) t f t r t tail 90% 90% 90% 10% 10% 10% 10% 1% v ge i c v ce
RJH60F4DPQ-A0 preliminary r07ds0325ej0100 rev.1.00 page 7 of 7 apr 06, 2011 package dimensions 15.94 0.19 5.45 6.15 21.13 0.33 20.19 0.38 4.5 max 3.60 0.1 1.27 0.13 5.45 2.41 0.71 0.1 5.02 0.19 unit: mm ? ? ordering information orderable part number quan tity shipping container RJH60F4DPQ-A0-t0 240 pcs box (tube)
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